HfAlOx and HfSiOx based dielectrics for future DRAM application

ECS Transactions

Volumn 2, Issue 1, 2006, Pages 217-223

  Heitmann, Johannes ^a   Avellán, Alcjandro ^a   Bocsckc, Tim ^a   Erben, Elke ^a   Hintze, Bernd ^a   Jakschik, Stefan ^a   Kudclka, Stephan ^a   Schrocdcr, Uwe ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTALLOGRAPHY; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; LAMINATES; LEAKAGE CURRENTS;

CONDUCTION BAND EDGE; LEAKAGE CURRENT MIXED FILMS; TEMPERATURE DEPENDENT LEAKAGE CURRENT MEASUREMENTS;

HAFNIUM COMPOUNDS;

EID: 33745446497     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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