Role of substrate misorientation in relaxation of 3C-SiC layers on silicon

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 169-172

  Zielinski, M ^a   Portail, M ^b   Roy, S ^b   Kret, S ^c   Chassagne, T ^a   Nemoz, M ^b   Cordier, Y ^b  

^a SAVOIE TECHNOLAC   (France)

^b CRHEA CNRS   (France)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

3C SiC; Heteroepitaxy; Surface morphology; Wafer bending

Indexed keywords

EPITAXIAL GROWTH; MORPHOLOGY; SILICON CARBIDE; SILICON WAFERS; STRESS RELAXATION; SURFACE MORPHOLOGY;

3C-SIC; ANISOTROPIC STRESS RELAXATIONS; COMPARATIVE STUDIES; IN-PLANE LATTICES; SILICON SUBSTRATES; STRUCTURAL DEFECT; SUBSTRATE MISORIENTATION; WAFER BENDING;

SUBSTRATES;

EID: 74049128838     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.169     Document Type: Conference Paper

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