Numerical study of turnstile operation in random-multidot-channel field-effect transistor

Journal of Applied Physics

Volumn 99, Issue 7, 2006, Pages

  Ikeda, Hiroya ^a   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTATIONAL METHODS; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); RANDOM PROCESSES;

FOUR-JUNCTION TURNSTILE DEVICE; GATE VOLTAGE; SINGLE-ELECTRON TURNSTILE DEVICE; TURNSTILE OPERATION;

FIELD EFFECT TRANSISTORS;

EID: 33645936987     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2189214     Document Type: Article

References (17)

1. R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, IEEE Trans. Nanotechnol. 2, 231 (2003).
2. H. Ikeda, R. Nuryadi, Y. Ishikawa, and M. Tabe, Jpn. J. Appl. Phys., Part 2 43, L759 (2004).
3. R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, Appl. Phys. Lett. 86, 133106 (2005).
4. L. J. Geerligs, V. F. Anderegg, P. A. M. Holweg, J. E. Mooij, H. Pothier, D. Esteve, C. Urbina, and M. H. Devoret, Phys. Rev. Lett. 64, 2691 (1990).
5. D. Esteve, Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructure, edited by, H. Grabert, and, M. H. Devoret, (Plenum, New York, 1992), Chap..
6. H. Pothier, P. Lafarge, P. F. Orfila, C. Urbina, D. Esteve, and M. H. Devoret, Physica B 169, 573 (1991).
7. M. Tabe, M. Kumezawa, Y. Ishikawa, and T. Mizuno, Appl. Surf. Sci. 175/176, 613 (2001).
8. A. A. Middleton and N. S. Wingreen, Phys. Rev. Lett. 71, 3198 (1993).
9. H.-O. Müller, K. Katayama, and H. Mizuta, J. Appl. Phys. 84, 5603 (1998).
10. R. H. Chen and K. K. Likharev, Appl. Phys. Lett. 72, 61 (1998).
11. K. K. Likharev, IEEE Trans. Magn. MAG-23, 1142 (1987).
12. M. Kirihara, N. Kuwamura, K. Taniguchi, and C. Hamaguchi, Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, 1994 (unpublished), p. 328.
13. M. Tabe, Y. Terao, R. Nuryadi, Y. Ishikawa, N. Asahi, and Y. Amemiya, Jpn. J. Appl. Phys., Part 1 38, 593 (1999).
14. M. Tabe, N. Asahi, Y. Amemiya, and Y. Terao, Jpn. J. Appl. Phys., Part 1 36, 4176 (1997).
15. M. Tabe, Y. Terao, N. Asahi, and Y. Amemiya, IEICE Trans. Electron. E81-C, 36 (1998).
16. H. D. Jensen and J. M. Martinis, Phys. Rev. B 46, 13407 (1992).
17. M. W. Keller, J. M. Martinis, N. M. Zimmerman, and A. H. Steinbach, Appl. Phys. Lett. 69, 1804 (1996).