SCOPUS 정보 검색 플랫폼

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectrics

(4) Cosceev, A a Muller Sajak D a Pfnur H a Hofmann, K R a

a LEIBNIZ UNIVERSITY HANNOVER (Germany)

Author keywords

Gate oxides; Heterostructures; High k dielectrics; Insulators; Interfaces

Indexed keywords

ALKALINE EARTH; ALTERNATIVE GATE DIELECTRICS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; EX SITU; GATE OXIDE; HETEROSTRUCTURES; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; INTERFACE TRAP DENSITY; MOS STRUCTURE; OXIDE THICKNESS; SI(0 0 1); UHV CHAMBERS;

BARIUM; CRYSTALS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GATES (TRANSISTOR); HETEROJUNCTIONS; OXIDES; SILICON; SILICON COMPOUNDS;

GATE DIELECTRICS;

EID: 73649112393 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.10.108 Document Type: Article

Times cited : (8)

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