Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 ≤ x ≤ 0.135) layers

Current Applied Physics

Volumn 10, Issue 3, 2010, Pages 838-841

  Yildiz, A ^a,b   Lisesivdin, S B ^c   Tasli, P ^d   Ozbay, E ^c   Kasap, M ^d  

^a AHI EVRAN UNIVERSITY   (Turkey)

^b ANKARA UNIVERSITY   (Turkey)

^c BILKENT UNIVERSITY   (Turkey)

^d GAZI UNIVERSITY   (Turkey)

Author keywords

Electronic transport; InGaN; MIT

Indexed keywords

ELECTRONIC TRANSPORT; LOW CONDUCTIVITY; LOW-TEMPERATURE CONDUCTIVITY; METALLIC SIDE; SCALING THEORIES; THERMAL ACTIVATION ENERGIES;

ACTIVATION ENERGY; CERIUM ALLOYS; GALLIUM; INDIUM; INDIUM ALLOYS; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSITION METAL ALLOYS; TRANSPORT PROPERTIES;

METAL INSULATOR TRANSITION;

EID: 73549088733     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.10.004     Document Type: Article

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