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Journal of Electroceramics

Volumn 23, Issue 2-4, 2009, Pages 415-421

Effect of fluorine doping on the properties of ZnO films deposited by radio frequency magnetron sputtering

(7) Ku, D Y c Kim, Y H b Lee, K S a Lee, T S a Cheong, B a Seong, T Y b Kim, W M a

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

c II Dong Chemical Co Ltd (South Korea)

Author keywords

Fluorine doped ZnO film; Magnetron sputtering; Transparent conducting oxide; Vacuum annealing

Indexed keywords

ABSORPTION LOSS; ANNEALED FILMS; AS-GROWN; AS-GROWN FILMS; ATOMIC CONCENTRATION; BENEFICIAL EFFECTS; CORNING GLASS; CRYSTALLINITIES; DOPING EFFICIENCY; FIGURE OF MERIT; FLUORINE CONTENT; FLUORINE DOPED ZNO FILM; FLUORINE DOPING; FLUORINE-DOPED ZNO; PREFERRED ORIENTATIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURE; TRANSPARENT CONDUCTING OXIDE; VACUUM-ANNEALING; VISIBLE RANGE; X-RAY DIFFRACTION STUDIES; ZNO; ZNO FILMS;

ANNEALING; BIOACTIVITY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; OPTICAL PROPERTIES; RADIO; RADIO WAVES; STRUCTURAL ANALYSIS; VACUUM; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

FLUORINE;

EID: 73449109186 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-008-9480-8 Document Type: Article

Times cited : (12)

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