Analytic model for organic thin film transistors (OTFTs): Effect of contact resistances application to the octithiophene

EPJ Applied Physics

Volumn 48, Issue 3, 2009, Pages

  Mansouri, S ^a   Mahdouani, M ^a   Oudir, A ^a   Zorai, S ^a   Ben Dkhil, S ^a   Horowitz, G ^b   Bourguiga, R ^a  

^a Struggle and Prevention   (Tunisia)

^b UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC MODELS; COMPLEX TASK; CONTACT EFFECT; ELECTRICAL MEASUREMENT; FUNCTIONAL DEPENDENCE; GATE VOLTAGES; INSULATING LAYERS; KEY PARAMETERS; NON-LINEAR; NON-OHMIC CONTACTS; ORGANIC DEVICES; ORGANIC ELECTRONICS; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; POLYCRYSTALLINE; REAL SITUATION; SATURATION REGIME; SOURCE AND DRAINS; TRANSFER CHARACTERISTICS; TRANSISTOR PARAMETERS;

CONTACT RESISTANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; FIELD EFFECT TRANSISTORS; OHMIC CONTACTS; SILICON COMPOUNDS; SILICON OXIDES; SMELTING; THIN FILM TRANSISTORS; THIN FILMS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 73149092067     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2009163     Document Type: Article

References (29)

1. M. Shur, M. Hack, J. Appl. Phys. 55, 3831 (1984)
2. Y.Y. Lin, D.J. Gundlach, T.N. Jackson, S.F. Nelson, IEEE Trans. Devices 44, 1325 (1997)
3. A. Salleo, M. Chabinyc, M.S. Yang, R.A. Street, Appl. Phys. Lett. 81, 4383 (2002)
4. H. Sirringhaus, P.J. Brown, R.H. Friend, M.M. Nielsen, K. Bech-gaard, B.M.W. Langeveld-Voss, A.J.H. Sprieng, R.A.J. Janssen, E.W. Meijer, P. Herwig, D.M. de Leeuw, Nature 401, 1038 (1999)
5. A. Cerdeira, M. Estrada, R. Garc̀ia, A. Ortiz-Conde, F.J.G. S̀anchez, Solid-State Electron. 45, 1077 (2001)
6. A. Ortiz-Conde, F.J.G. S̀anchez, J.J. Liou, A. Cerdeira, M. Estrada, Y. Yue, Microelectron. Reliab. 42, 583 (2002)
7. M. Estrada, A. Cerdeira, A. Ortiz-Conde, F.J.G. S̀anchez, B. Iñiguez, Solid-State Electron. 46, 2295 (2002)
8. B. Sevret, G. Horowitz, S. Ries, O. Lagorsse, P. Alnot, A. Yassar, F. Deloffre, P. Srivastava, R. Hajlaoui, P. Lang, F. Garnier, Chem. Mater. 6, 1809 (1994)
9. F. Garnier, A. Yassar, R. Hajlaoui, G. Horowitz, F. Deloffre, B. Sevret, S. Ries, P. Alnot, J. Am. Chem. Soc. 115, 8716 (1993)
10. Y.Y. Lin, D.J. Gundlach, T.N. Jackson, Mat. Res. Soc. Symp. Proc. 413, 413 (1996)
11. G. Horowitz, J. Mater. Res. 19, 1946 (2004)
12. T. Li, P.P. Ruden, I.H. Campell, D.L. Smith, J. Appl. Phys. 93, 4017 (2003)
13. R. Hajlaoui, G. Horowitz, F. Garnier, A. Arce-Brouchet, L. Laigre, A. El Kassmi, F. Demanze, F. Kouki, Adv. Mater. 9, 389 (1997)
14. G. Horowitz, M.E. Hajlaoui, R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000)
15. G. Horowitz, M.E. Hajlaoui, Synth. Met. 122, 185 (2001)
16. R. Bourguiga, M. Mahdouani, S. Mansouri, G. Horowitz, Eur. Phys. J. Appl. Phys. 39, 7 (2007)
17. G. Horowitz, P. Delannoy, J. Appl. Phys. 70, 469 (1991)
18. G. Horowitz, R. Hajlaoui, P. Delannoy, J. Phys. III France 5, 355 (1995)
19. G. Horowitz, X. Peng, D. Fichou, F. Garnier, J. Appl. Phys. 67, 528 (1990)
20. A. Tsumura, H. Koezuka, T. Ando, Synth. Met. 25, 11 (1991)
21. J.H. Burroughes, C.A. Jones, R.H. Friend, Nature 335, 137 (1989)
22. S.M. Sze, Physics of semiconductor devices, 2nd edn. (Wiley, New York, 1981), p. 433
23. G. Horowitz, R. Hajlaoui, R. Bourguiga, M.E. Hajlaoui, Synth. Met. 101, 401 (1999)
24. D. Natali, L. Fumagallli, M. Sampietro, J. Appl. Phys. 101, 014501 (2007)
25. S. Jain, Proc. IEE Solid-State Electron. Devices, Part I 135, 162 (1988)
26. W. Fikry, G. Ghibaudo, H. Haddara, S. Cristoloveanu, M. Dutoit, Electron. Lett. 31, 762 (1995)
27. G. Horowitz, Adv. Mater. 10 (1998)
28. C.D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, J.M. Shaw, Science 283, 822 (1999)
29. G. Horowitz, R. Hajlaoui, D. Fichou, A. Elkassmi, J. Appl. Phys. 85, 3202 (1999)