Extraction method for polycrystalline TFT above and below threshold model parameters

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2295-2300

  Estrada, M ^a   Cerdeira, A ^a   Ortiz Conde, A ^b   Garcia Sanchez F J ^b   Iniguez B ^c  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

^c UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

Parameter extraction procedure; TFT mobility modeling; TFT modeling

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRIC POTENTIAL; EXTRACTION; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILANES;

PARAMETER EXTRACTION; THRESHOLD MODEL PARAMETERS;

THIN FILM TRANSISTORS;

EID: 0036890940     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00186-7     Document Type: Article

References (5)

1. AIM-Spice, Circuit Simulation Program by AIM-Software. (www.aimspice.com).
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3. Estrada M., Cerdeira A., Ortiz-Conde A., García F.J., Iñiguez B. Unified extraction method for amorphous and polycrystalline TFT above threshold model parameters. ICCSCD 2002, Aruba, April 16-19, 2002.
4. Fjeldly T., Ytterdal T., Shur M. Introduction to device modeling and circuit simulation. 1998;John Wiley, New York.
5. Iñiguez B., Xu Z., Fjeldly T.A., Shur M.S. Unified model for short-channel poly-Si TFTs. Solid-State Electron. 43:1999;1818-1821.