The dependence of GaN HEMT's frequency figure of merit on temperature

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 909-912

  Darwish, Ali M ^a   Huebschman, Benjamin ^a   Viveiros, Edward ^a   Hung, H Alfred ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Cutoff frequency; Gallium nitride; Maximum oscillation frequency; MMIC; Saturated current; Temperature coefficient; Transconductance

Indexed keywords

FIGURE OF MERIT; GAN HEMTS; GAN TECHNOLOGY; MAXIMUM OSCILLATION FREQUENCY; SATURATED CURRENT; TEMPERATURE COEFFICIENT; TEMPERATURE SPECIFICATIONS; THERMAL CHARACTERIZATION;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INSULATING MATERIALS; MICROWAVE CIRCUITS; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TRANSCONDUCTANCE;

CUTOFF FREQUENCY;

EID: 77949947233     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165845     Document Type: Conference Paper

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