Temperature dependence of intermodulation and linearity in GaN based devices

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 579-582

  Ahmed, Arif ^a   Islam, Syed S ^a   Anwar, A F M ^a  

^a University of Connecticut   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DISTORTION; EQUIVALENT CIRCUITS; GAIN MEASUREMENT; GALLIUM NITRIDE; MONTE CARLO METHODS; NONLINEAR NETWORKS; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS;

INTERMODULATION DISTORTION; POWER ADDED EFFICIENCY; SOFTWARE PACKAGE CADENCE; THIRD ORDER INTERMODULATION DISTORTION; VOLTERRA SERIES REPRESENTATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035689838     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/RFIC.2001.935692     Document Type: Article

References (10)

1. Physics based intrinsic model for a AlGaN/GaN HEMTs
2. AlGaN/GaN HEMTs grown on SiC substrates
3. 1-x semiconductors
4. Intermodulation distortion analysis of MESFET amplifiers using the Volterra series representation
5. Analysis of nonlinear systems with multiple inputs
6. Bias dependent microwave performance of AlGaN/GaN MODFET's upto 100V
7. High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors
8. High power AlGaN/GaN HEMTs for microwave applications