Materials characterization and device performance survey of InAlN/GaN HEMT layers from commercial sources

2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Volumn , Issue , 2008, Pages

  Trejo, M ^a   Jessen, G H ^a   Crespo, A ^a   Gillespie, J K ^a   Langley, D ^a   Denninghoff, D ^a   Via, G D ^a   Carlin, J ^a   Tomich, D ^a   Grant, J ^a   Smith, H ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

HEMT; InAlN; Ka band; Wide bandgap

Indexed keywords

COMMERCIAL SOURCES; DEVICE PERFORMANCE; INALN; KA BAND; MATERIAL STOICHIOMETRY; MATERIALS CHARACTERIZATION; NOMINAL THICKNESS; WIDE BAND GAP;

ENERGY GAP; HIGH ELECTRON MOBILITY TRANSISTORS; SILICON CARBIDE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 84887461731     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. Y.-F Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Letters, Vol. 25, no. 3, pp. 117-119, Mar. 2004.
3. M. Higashiwaki, T. Mimura, and T. Matsui, "High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors," Japanese Journal of Applied Physics, Vol. 45, no. 32, pp. L843-L845, 2006.
4. J. Kuzmik "Power Electronics on InAlN/(In)GaN:Prospect for a Record Performance" IEEE Electron Device Letters, Vol. 22, no. 11, pp. 510-512, Nov. 2001.
5. G. Jessen, R. Fitch, J. Gillespie, G.D. Via, A. Crespo, D. Langley, D.J. Denninghoff, M. Trejo, and E.R. Heller, "Short-Channel Effect Limitations in High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices," IEEE Transactions on Electronic Devices, Vol. 54, no. 10, pp. 2589-2597, 2007.