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Volumn 2006, Issue , 2006, Pages
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20mΩcm2 660V super junction MOSFETs fabricated by deep trench etching and epitaxial growth
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN;
ELECTROCHEMICAL ETCHING;
EPITAXIAL GROWTH;
ION IMPLANTATION;
MICROFABRICATION;
SEMICONDUCTOR JUNCTIONS;
DEEP TRENCH ETCHING;
P-TYPE ION IMPLANTATION;
TERMINATION REGION;
MOSFET DEVICES;
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EID: 34247481026
PISSN: 10636854
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (29)
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References (8)
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