Benchmarking EUV mask inspection beyond 0.25 NA

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7122, Issue , 2008, Pages

  Goldberg, Kenneth A ^a   Mochi, Iacopo ^a   Naulleau, Patrick P ^a   Han, Hakseung ^b   Huh, Sungmin ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b SAMSUNG Electronics   (South Korea)

^c SEMATECH   (United States)

Author keywords

Actinic inspection; Contrast; Euv; Extreme ultraviolet lithography; Linewidth; Mask inspection; Zoneplate

Indexed keywords

ACTINIC INSPECTION; CONTRAST; EUV; MASK INSPECTION; ZONEPLATE;

ACTINIDES; BENCHMARKING; IMAGE PROCESSING; IMAGING SYSTEMS; INSPECTION; LASER PULSES; MASKS; OPTOELECTRONIC DEVICES; ULTRAVIOLET DEVICES;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 62749160061     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.801529     Document Type: Conference Paper

References (6)

1. W. Cho, H.-S. Han, K. A. Goldberg, P. A, Kearney, C.-U. Jeon, "Detectability and printability of EUVL-mask blank defects for the 32-nm HP node," Proc. SPIE 6730, 673013-1-9 (2007).
2. K. A. Goldberg, P. P. Naulleau, A, Barty, S. B. Rekawa, C. D. Kemp, R. F. Gunion, F. Salmassi, E. M, Gullikson, E. H. Anderson, H.-S. Han, "Performance of actinic EUVL mask imaging using a zoneplate microscope," Proc. SPIE 6730, 67305E-1-12 (2007).
3. K. A. Goldberg, P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, S. Huh, "Actinic EUV Mask Inspection beyond 0.25 NA," J. Vac. Sci. & Technol. B, (2008) in press.
4. W. Cho, H.-S. Han, K. A. Goldberg, P. A. Kearney, C.-U. Jeon, "Detectability and printability of EUVL-mask blank defects for the 32-nm HP node," Proc. SPIE 6730, 673013-1-9 (2007).
5. H.-S. Han, W. Cho, K. A. Goldberg, E. M. Gullikson, C.-U. Jeon, S. Wurm, "Determining the critical size of EUV- mask substrate defects," Proc. SPIE 6921, 62911Y (2008).
6. S.-Y. Lee, G.-B. Kim, H.-S. Sim, S.-H. Lee, et al., "Analysis of process margin in EUV mask repair with nanomachining," Proc. SPIE 7122, in press.