Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 2732-2736

  Fischer, C ^a   Menezes, J W ^a   Moshkalev, S A ^a   Verissimo C ^a   Vaz, A R ^a   Swart, J W ^a,b  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b CTI   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP REACTIVE ION ETCHING; HIGH-ASPECT RATIO; MICROMASKING; NANO-CONES; NANO-ISLANDS; NANO-STRUCTURED; NANOPILLARS; NI FILMS; OPTIMIZED ETCHING; PILLAR FORMATION; REDEPOSITION; REFLECTION COEFFICIENTS; SI NANOCONES; SI SURFACES; SUBMICRON RANGE; TILT ANGLE;

ASPECT RATIO; NICKEL; PASSIVATION; SILICON;

REACTIVE ION ETCHING;

EID: 72849121055     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3246359     Document Type: Conference Paper

References (14)

1. K. Nishioka, S. Horita, K. Ohdaira, and H. Matsumura, Sol. Energy Mater. Sol. Cells 92, 919 (2008).
2. M. Halbwax, T. Sarnet, Ph. Delaporte, M. Sentis, H. Etienne, F. Torregrosa, V. Vervisch, I. Perichaud, and S. Martinuzzi, Thin Solid Films 516, 6791 (2008).
3. G. Kumaravelu, M. M. Alkaisi, and A. Bittar, Proceedings of the 29th IEEE Photovoltaic Specialists Conference, New Orleans, LA, 2002 (unpublished), p. 258.
4. H. Jansen, M. de Boer, J. Burger, R. Legtenberg, and M. Elwenspoek, Microelectron. Eng. 27, 475 (1995).
5. L. Sainiemi, H. Keskinen, M. Aromaa, L. Luosujärvi, K. Grigoras, T. Kotiaho, J. M. Mäkelä, and F. Franssila, Nanotechnology 18, 505303 (2007).
6. M. Stubenrauch, M. Fischer, C. Kremin, S. Stoebenau, A. Albrecht, and O. Nagel, J. Micromech. Microeng. 16, S82 (2006).
7. C. Chang, Y.-F. Wang, Y. Kanamori, J.-J. Shih, Y. Kawai, C.-K. Lee, K.-C. Wu, and M. Esashi, J. Micromech. Microeng. 15, 580 (2005).
8. P. Sigmund, J. Vac. Sci. Technol. 17, 396 (1980).
9. G.-R. Lin, Y.-C. Chang, E.-S. Liu, H.-C. Kuo, and H.-S. Lin, Appl. Phys. Lett. 90, 181923 (2007).
10. A. A. Ayon, R. Braff, C. C. Lin, H. H. Sawin, and M. A. Schmidt, J. Electrochem. Soc. 146, 339 (1999).
11. A. A. Ayon, R. A. Braff, R. Bayt, H. H. Sawin, and M. A. Schmidt, J. Electrochem. Soc. 146, 2730 (1999).
12. M. Parameswaran, D. Xie, and P. G. Glavina, J. Electrochem. Soc. 140, L111 (1993).
13. S. Karmalkar, D. Sridhar, and J. Banerjee, J. Electrochem. Soc. 144, 1696 (1997).
14. G.-R. Lin, C.-J. Lin, H.-C. Kuo, H.-S. Lin, and C.-C. Kao, Appl. Phys. Lett. 90, 143102 (2007).