|
Volumn 396, Issue 1, 2010, Pages 173-180
|
Optical far- and near-field femtosecond laser ablation of Si for nanoscale chemical analysis
|
Author keywords
Far field; Laser ablation; Laser spectroscopy; LIBS; Near field; Semiconductor materials; Silicon
|
Indexed keywords
CRATER SIZES;
FAR-FIELD;
FEMTO-SECOND LASER;
FEMTOSECOND LASER ABLATION;
FEMTOSECOND LASER BEAMS;
FEMTOSECOND LASER PULSE;
FEMTOSECONDS;
LASER-INDUCED BREAKDOWN SPECTROSCOPY;
LIBS;
MATERIAL DAMAGES;
NANO SCALE;
NANOSCIENCE AND NANOTECHNOLOGIES;
NEAR-FIELD;
SPATIAL RESOLUTION;
SPECTRAL EMISSION;
SUBMICROMETERS;
SUBWAVELENGTH APERTURES;
CHEMICAL ANALYSIS;
CHEMICALS;
LASER ABLATION;
LASER CHEMISTRY;
LASER SPECTROSCOPY;
LASERS;
MICROMETERS;
NANOSCIENCE;
NANOSTRUCTURED MATERIALS;
PULSED LASER DEPOSITION;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR LASERS;
SPECTRUM ANALYSIS;
ULTRASHORT PULSES;
PULSED LASER APPLICATIONS;
|
EID: 72849120733
PISSN: 16182642
EISSN: 16182650
Source Type: Journal
DOI: 10.1007/s00216-009-3136-7 Document Type: Article |
Times cited : (37)
|
References (25)
|