Properties and electronic structure of heavily oxygen-doped GaN crystals

Chemical Physics Letters

Volumn 451, Issue 4-6, 2008, Pages 222-225

  Miura, Akira ^a   Shimada, Shiro ^a   Yokoyama, Masaaki ^b   Tachikawa, Hiroto ^a   Kitamura, Toshio ^c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b HORIBA LTD   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBOTHERMAL REDUCTION; CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; MOLECULAR OXYGEN;

CRYSTALLINITY; HIGH CONCENTRATION OXYGEN; LUMINESCENCE ENERGY; OXYGEN DOPED;

GALLIUM NITRIDE;

EID: 38049090715     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2007.12.007     Document Type: Article

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