Synthesis and impurity doping of GaN powders by the two-stage vapor-phase method for phosphor applications

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 11, 2006, Pages 2694-2700

  Hara, K ^a   Okuyama, E ^b   Yonemura, A ^b   Uchida, T ^b   Okamoto, N ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENT IMPURITIES; REACTION TEMPERATURE; VAPOR PHASE SYNTHESIS;

DOPING (ADDITIVES); LUMINESCENCE; PARTICLE SIZE ANALYSIS; PHOSPHORS; REACTION KINETICS;

GALLIUM NITRIDE;

EID: 33749039459     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200669660     Document Type: Article

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