Boron doped diamond deposited by microwave plasma-assisted CVD at low and high pressures

Diamond and Related Materials

Volumn 17, Issue 4-5, 2008, Pages 481-485

  Ramamurti, R ^a   Becker, M ^b   Schuelke, T ^b   Grotjohn, T ^a,b   Reinhard, D ^a,b   Swain, G ^a   Asmussen, J ^a,b  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b Fraunhofer Center for Coatings and Laser Applications   (United States)

Author keywords

Diamond film; Electrical conductivity; P type doping

Indexed keywords

BORON COMPOUNDS; GAS MIXTURES; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SILICON WAFERS;

BORON DOPED DIAMOND; GAS CHEMISTRY; POLYCRYSTALLINE DIAMOND; POLYCRYSTALLINE FILMS;

DIAMOND FILMS;

EID: 42949100471     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2007.08.042     Document Type: Article

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