Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 11, 2009, Pages 2575-2577

  Maki J M ^a   Tuomisto, F ^a   Bastek, B ^b   Bertam, F ^b   Christen, J ^b   Dadgar, A ^b,c   Krost, A ^b,c  

^a AALTO UNIVERSITY   (Finland)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c AZZURRO Semiconductors Ag Magdeburg ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; GROWTH CONDITIONS; HIGH CONCENTRATION; LAYER THICKNESS; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; POSITRON BEAMS; PRECURSOR MOLECULES; STRUCTURAL DEFECT; THIN FILM ALUMINUM; THIN LAYERS; V/III RATIO; VACANCY CONCENTRATION; VACANCY CONTENT; VACANCY DEFECTS; VACANCY FORMATION; VACANCY-TYPE DEFECTS;

ALUMINUM NITRIDE; CRYSTAL GROWTH; DEFECTS; GROWTH TEMPERATURE; LATTICE MISMATCH; NITRIDES; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILMS;

VACANCIES;

EID: 72449174346     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200982108     Document Type: Conference Paper

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