Conduction mechanism of sputtered BaTiO3 film on Ni substrate

Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

  Bao, Lijie ^a   Ryley, James ^a   Li, Zhigang ^a   Wilker, Charles ^a   Zhang, Lei ^a   Reardon, Damien ^a   Opila, Robert ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; COLUMNAR STRUCTURES; CONDUCTION MECHANISM; ELECTRICAL MEASUREMENT; HIGH-CAPACITANCE DENSITY; INTERFACE STRUCTURES; LOW-LEAKAGE CURRENT; MICRO-STRUCTURAL; NI SUBSTRATES; POST-DEPOSITION ANNEAL; RECRYSTALLIZATIONS; RF-MAGNETRON SPUTTERING; THIN-FILM CAPACITORS;

CAPACITANCE; CAPACITORS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; SUBSTRATES; THIN FILM CIRCUITS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 72449150161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3254194     Document Type: Article

References (22)

1. J. Ihlefeld, B. Laughlin, A. Hunt-Lowery, W. Borland, A. Kingon, and J. -P. Maria, J. Electroceram. 1385-3449 14, 95 (2005). 10.1007/s10832-005-0866-6 (Pubitemid 40537778)
2. J. T. Dawley and P. G. Clem, Appl. Phys. Lett. 0003-6951 81, 3028 (2002). 10.1063/1.1516630 (Pubitemid 35328456)
3. G. Y. Yang, G. D. Lian, E. C. Dickey, C. A. Randall, D. E. Barber, P. Pinceloup, M. A. Henderson, R. A. Hill, J. J. Beeson, and D. J. Skamser, J. Appl. Phys. 96, 7500 (2004). 10.1063/1.1809268 (Pubitemid 40044443)
4. D. Hennings, Int. J. High Technol. Ceram. 0267-3762 3, 91 (1987). 10.1016/0267-3762(87)90031-2
5. M. Vollmann, R. Hagenbeck, and R. Waser, J. Am. Ceram. Soc. 0002-7820 80, 2301 (1997).
6. M. Yashima, T. Hoshina, D. Ishimura, S. Kobayashi, W. Nakamura, T. Tsurumi, and S. Wada, J. Appl. Phys. 0021-8979 98, 014313 (2005). 10.1063/1.1935132 (Pubitemid 41055446)
7. T. Yasumoto, N. Yanase, K. Abe, and T. Kawakubo, Jpn. J. Appl. Phys., Part 1 0021-4922 39, 5369 (2000). 10.1143/JJAP.39.5369
8. A. Kursumovic, Acta Mater. 1359-6454 51, 3759 (2003). 10.1016/S1359-6454(03)00190-3
9. L. A. Shebanov, Phys. Status Solidi A 0031-8965 65, 321 (1981). 10.1002/pssa.2210650137
10. Y. K. Vayunandana Reddy, D. Mergel, S. Reuter, V. Buck, and M. Sulkowski, J. Phys. D 0022-3727 39, 1161 (2006). 10.1088/0022-3727/39/6/023 (Pubitemid 44773275)
11. M. Vollmann and R. Waser, J. Am. Ceram. Soc. 0002-7820 77, 235 (1994). 10.1111/j.1151-2916.1994.tb06983.x
12. S. Zafar, R. E. Jones, B. Jiang, B. White, V. Kaushik, and S. Gillespie, Appl. Phys. Lett. 0003-6951 73, 3533 (1998). 10.1063/1.122827 (Pubitemid 128677455)
13. G. W. Dietz, W. Antpohler, M. Klee, and R. Waser, J. Appl. Phys. 0021-8979 78, 6113 (1995). 10.1063/1.360553
14. F. El Kamel and P. Gonon, Mater. Sci. Semicond. Process. 1369-8001 9, 923 (2006). 10.1016/j.mssp.2006.10.041
15. J. G. Simmons, Phys. Rev. Lett. 0031-9007 15, 967 (1965). 10.1103/PhysRevLett.15.967
16. J. G. Simmons, J. Phys. D 0022-3727 4, 613 (1971). 10.1088/0022-3727/4/5/ 202
17. M. A. Lampert and P. Mark, Current Injections in Solids (Academic, New York, 1970).
18. T. Nagatomo and O. Omoto, Jpn. J. Appl. Phys., Part 1 0021-4922 26, L914 (1987). 10.1143/JJAP.26.L914
19. D. E. Kotecki, J. D. Baniecki, H. Shen, R. B. Laibowitz, K. L. Saenger, J. J. Lian, T. M. Shaw, S. D. Athavale, C. Cabral, Jr., P. R. Duncombe, M. Gutsche, G. Kunkel, Y. -J. Park, Y. Y. Wang, and R. Wise, IBM J. Res. Dev. 0018-8646 43, 367 (1999).
20. G. W. Dietz, M. Schumacher, R. Waser, S. K. Streiffer, C. Basceri, and A. I. Kingon, J. Appl. Phys. 0021-8979 82, 2359 (1997). 10.1063/1.366045
21. C. N. Berglund and W. S. Baer, Phys. Rev. 0096-8250 157, 358 (1967). 10.1103/PhysRev.157.358
22. J. P. Boyeaux and F. M. Michel-Calendini, J. Phys. C 0022-3719 12, 545 (1979). 10.1088/0022-3719/12/3/021