Investigation of electrically active defects in amorphous barium titanate thin films

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 923-927

  El Kamel, F ^a,b   Gonon, P ^a  

^a CNRS   (France)

^b UNIVERSITY OF TUNIS EL MANAR   (Tunisia)

Author keywords

Active defects; BaTiO3; DC and AC electrical properties; Space charge limited current

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; BARIUM TITANATE; CAPACITORS; ELECTRIC PROPERTIES; ELECTRON TRAPS; LEAKAGE CURRENTS;

ACTIVE DEFECTS; BATIO3; DC AND AC ELECTRICAL PROPERTIES; SPACE CHARGE LIMITED CURRENT;

THIN FILMS;

EID: 33846078781     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.041     Document Type: Article

References (22)

1. Barnes F., Proce F.J., Herman A., Zhang Z., Hu H.D., Galt D., et al. Integr Ferroelectr 8 (1995) 171
2. Kotecki D.E. Integr Ferroelectr 16 (1997) 1
3. Ihlefeld JF, Kingon AI, Borland W, Maria JP. in: Muralt P, Cho YS, Klee M, Maria JP, Randall CA, Hoffmann, C editors. Materials, integration and packaging issues for high frequency devices. Proceedings of the materials research symposium proceeding, vol. 783, Boston, USA. 1-5 December 2003. p. B3.2.
4. Laughlin B, Ihlefeld JF, Maria JP. in: Hoffmann-Eifert S, Funakubo H, Joshi V, Kingon AI, Koutsaroff IP editors. Ferroelectric thin films XII. Proceedings of the materials research symposium proceeding, vol. 784, Boston, USA. 1-5 December 2003. p. C5.3.
5. Kingon A.I., and Srinivasan S. Nat Mater 4 (2005) 233
6. Lampert M., and Mark P. Current injections in solids (1970), Academic, New York
7. Pencheva T., and Nenkov M. Vacuum 48 (1997) 43
8. Waser R. J Am Ceram Soc 72 (1989) 2234
9. Waser R., Baiatu T., and Hardtl K.H. J Am Ceram Soc 73 (1990) 1654
10. Baiatu T., Waser R., and Hardtl K.H. J Am Ceram Soc 73 (1990) 1663
11. Waser R., and Smyth D.M. In: Taylor G.W. (Ed). Ferroelectric thin films: synthesis and basic properties (1996), Gordon and Breach, New York
12. Fukuda Y., Numata K., Aoki K., and Nishimura A. Jpn J Appl Phys Part I 35 (1996) 5178
13. El Kamel F., Gonon P., Ortega L., Jomni F., and Yangui B. J Appl Phys 99 (2006) 094107
14. Peng C.J., and Krupanidhi S.B. J Mater Res 10 (1995) 708
15. Sze S.M. Physics of semiconductor devices. 2nd ed (1981), Wiley, New York
16. Hwang C.S., Lee B.T., Kang C.S., Kim J.W., Lee K.H., Cho H.J., et al. Appl Phys 83 (1998) 3703
17. Wang S.Y., Cheng B.L., Wang C., Dai S.Y., Lu H.B., Chen Z.H., et al. Appl Phys Lett 84 (2004) 4116
18. Chang S.T., and Lee J.Y.-M. Appl Phys Lett 80 (2002) 655
19. Vogt M., and Drescher K. Appl Surf Sci 91 (1995) 303
20. Raghavan G., Chiang C., Anders P.B., Tzeng S.-M., Villasol R., et al. Thin Sol Films 262 (1995) 168
21. Willis B.G., and Lang D.V. Thin Sol Films 467 (2004) 284
22. Ihlefeld J., Laughlin B., Hunt-Lowery A., Borland W., Kingon A., and Maria J.-P. J Electroceram 14 (2005) 95