Oxygen nonstoichiometry and dielectric evolution of BaTiO 3. Part II- Insulation resistance degradation under applied dc bias

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7500-7508

  Yang, G Y ^a   Lian, G D ^a,c   Dickey, E C ^a   Randall, C A ^a   Barber, D E ^b   Pinceloup, P ^b   Henderson, M A ^b   Hill, R A ^b   Beeson, J J ^b   Skamser, D J ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b KEMET ELECTRONICS CORPORATION   (United States)

^c ATDF Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; INSULATION-RESISTANCE DEGRADATION; METASTABLE LATTICE STRUCTURES;

CERAMIC CAPACITORS; DEGRADATION; DIELECTRIC FILMS; ELECTRIC INSULATION; ELECTRIC RESISTANCE; ELECTRODES; ELECTROMIGRATION; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MICROSTRUCTURE; MULTILAYERS; OXYGEN; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

BARIUM COMPOUNDS;

EID: 19944362485     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1809268     Document Type: Article

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