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Volumn 80, Issue 9, 1997, Pages 2301-2314

Grain-boundary defect chemistry of acceptor-doped titanates: Inversion layer and low-field conduction

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN BOUNDARIES; IONIC CONDUCTION IN SOLIDS; STRONTIUM COMPOUNDS; THERMAL EFFECTS;

EID: 0031236853     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1997.tb03121.x     Document Type: Article
Times cited : (125)

References (21)
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    • Waser, R.1
  • 3
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    • Vollmann, M.1    Waser, R.2
  • 4
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    • dc Electrical Degradation of Perovskite-Type Titanates: I, Ceramics
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  • 5
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    • Processing: Degradation and Reliability
    • Edited by N. Setter and E. L. Colla. Birkhäuser Verlag, Basel, Switzerland
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    • Waser, R.1
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    • Tragut, Ch.1    Härdtl, K.H.2
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    • Semiconductor Grain Boundary Admittance
    • G. E. Pike, "Semiconductor Grain Boundary Admittance," Phys. Rev. B: Condens. Matter, 30 [2] 795-802 (1984).
    • (1984) Phys. Rev. B: Condens. Matter , vol.30 , Issue.2 , pp. 795-802
    • Pike, G.E.1
  • 10
    • 0001801578 scopus 로고    scopus 로고
    • Grain Boundary Defect Chemistry of Acceptor-Doped Titanates: High Field Effects
    • M. Vollmann and R. Waser, "Grain Boundary Defect Chemistry of Acceptor-Doped Titanates: High Field Effects," J. Electroceram., 1 [1] 51-64 (1997).
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  • 11
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    • Numerical Simulation of the Defect Chemistry and the Electrostatics at Grain Boundaries in Titanate Ceramics
    • R. Hagenbeck, L. Schneider-Störmann, M. Vollmann, and R. Waser, "Numerical Simulation of the Defect Chemistry and the Electrostatics at Grain Boundaries in Titanate Ceramics," Mater. Sci. Eng. B, B39, 179-87 (1996).
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    • Determination of Acceptor Concentrations and Energy Levels in Oxides Using an Optoelectrochemical Technique
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  • 16
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  • 19
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.