Epitaxial growth of BaTiO3 thin films by high gas pressure sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 B, 2000, Pages 5369-5373

  Yasumoto, Takaaki ^a   Yanase, Naoko ^a   Abe, Kazuhide ^a   Kawakubo, Takashi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FERROELECTRICITY; HIGH PRESSURE EFFECTS IN SOLIDS; HYSTERESIS; LATTICE CONSTANTS; MAGNETRON SPUTTERING; POLARIZATION; STRONTIUM COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXIAL GROWTH; HIGH GAS PRESSURE SINTERING; LATTICE MISFIT STRAIN; REMANENT POLARIZATION; STRONTIUM TITANATE;

THIN FILMS;

EID: 0034262866     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5369     Document Type: Article

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