Microwave power performance on AlGaN/GaN HEMTs on composite substrate

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Volumn , Issue , 2009, Pages 144-147

  De Jaeger, Jean Claude ^a   Hoel, Virginie ^a   Defrance, Nicolas ^a   Douvry, Yannick ^a   Gaquiere, Christophe ^a   Di Forte Poisson, Marie Antoinette ^b   Thorpe, James ^c   Lahreche, Hacene ^d   Langer, Robert ^d  

^a INSTITUT D ELECTRONIQUE   (France)

^b NOKIA RESEARCH CENTER   (United States)

^c United Monolithic Semiconductors GmbH   (Germany)

^d Picogiga International   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; BEST VALUE; COMPOSITE SUBSTRATE; EPITAXIAL STRUCTURE; HIGH POWER DENSITY; INNOVATIVE ENGINEERING; INSULATING LAYERS; LINEAR GAIN; MICROWAVE POWER PERFORMANCE; MOCVD; MONOCRYSTALLINE; OUTPUT POWER DENSITY; POLYCRYSTALLINE; POLYCRYSTALLINE SIC; SINGLE CRYSTAL LAYERS; SMART-CUT;

CHEMICAL VAPOR DEPOSITION; DIELECTRIC RELAXATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; MICROWAVE GENERATION; MICROWAVE INTEGRATED CIRCUITS; MICROWAVE POWER TRANSMISSION; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72449131824     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Y.F. Wu, A. Saxler, M. Moore, R. P Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, P. Parikh, "30-W/mm GaN HEMTs by Field Plate Optimization" IEEE Electron Device Letters, March 2004, vol. 25, issue 3, pp. 117-119.
2. D. Ducatteau, A. Minko, V.Hoel, E. Morvan, E.Delos, B. Grimbert, H. Lahreche, P. Bove, C. Gaquiere, J.C. De Jaeger, S. Delage, "Output power density of 5.1W/mm at 18 GHZ with an AlGaN/GaN HEMT on Si substrate," IEEE Electron Device Lett., vol. 27, pp. 7-9, Jan. 2006.
3. A. Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, and U. Mishra, "12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate," Electron. Lett., vol. 40, no. 1, pp. 73-74, Jan. 2004.
4. A. Minko, V. Hoel, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, C. Gaquiere, D. Theron, J.C. De Jaeger, H. Lahreche, L. Wedzikowski, R. Langer, P. Bove, "AlGaN/GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz" IEEE Electron Device Lett., vol. 25,no 7, pp. 453-455, July. 2004.
5. V. Hoel, N. Defrance, J.C. De Jaeger, H. Gerard, C. Gaquiere, H. Lahreche, R. Langer, A. Wilk, M. Lijadi, S. Delage, "First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate" Electronics Letters, Vol 28, Issue3, January 2008 Volume: 44, Issue: 3, pp. 238-239.
6. V. Hoel, S. Boulay, H. Gerard, V. Raballand, E. Delos, Jc De Jaeger, M.A. Di Forte-Poisson, C. Brylinski, H. Lahreche, R. Langer, P. Bove «AlGaN/GaN HEMTs on Epitaxies Grown on Composite Substrate» EuMIC 2007, Munich, Germany, Oct. 2007.
7. A. Soltani, A. Benmoussa, S. Touati, V. Hoel, J.C. De Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M.A. Djouadi, C. Dua "Development and analysis of low resistance ohmic contact to n-AlGaN/GaN" Diamond and related materials, Vol 16, issue 2, pp.262-266, Feb. 2007.
8. G. Meneghesso, C. Ongaro, E. Zanoni, C. Brylinski, M.A. Di Forte-Poisson, V. Hoel, J.C. De Jaeger, R. Langer, H. Lahreche, P. Bove, J. Thorpe, "Characterization of AlGaN/GaN HEMT epitaxy and devices on composite substrates" IEEE International IEDM Technical Digest 2007, Washington, USA, Dec. 2007.