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European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007

Volumn , Issue , 2007, Pages 100-103

AlGaN/GaN HEMTs on epitaxies grown on composite substrate

(11) Hoel, V a Boulay, S a Gerard, H a Rabaland, V a Delos, E a De Jaeger, J C a Di Forte Poisson, M A b Brylinski, C b Lahreche, H c Langer, R c Bove, P c

a INSTITUT D ELECTRONIQUE (France)

b ALCATEL THALES III V LAB (France)

c PICOGIGA International ^* (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRONICS INDUSTRY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES;

ALGAN/GAN; COMPOSITE SUBSTRATES; EPITAXIAL STRUCTURES; EUROPEAN; INNOVATIVE STRUCTURES; POLYCRYSTALLINE SIC; SIC SINGLE CRYSTAL;

INTEGRATED CIRCUITS;

EID: 48149103941 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/EMICC.2007.4412657 Document Type: Conference Paper

Times cited : (3)

References (5)

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2
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- Aug
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3
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- Oct
- H. LAHRECHE, B. FORE, C. RICHTARCH, F. LETERTRE, R. LANGER and P. BOVE, "Progress in wicrowave GaN HEMT grown by MBE on Silicon and smart cut/spl trade/engineered substrates for high power applications," European EGAAS 2005, pp. 369-371, Oct. 2005.
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4
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5
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.