Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 401-404

  Meneghesso, G ^a   Ongaro, C ^a   Zanoni, E ^a   Brylinski, C ^b   Di Forte Poisson, M A ^b   Hoet, V ^c   De Jaeger, J C ^c   Langer, R ^d   Lahreche, H ^d   Bove, P ^d   Thorpe, J ^e  

^a UNIVERSITY OF PADOVA   (Italy)

^b NOKIA RESEARCH CENTER   (United States)

^c UNIV LILLE   (France)

^d Picogiga International   (France)

^e United Monolithic Semiconductors GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; COMMUNICATION SYSTEMS; CRYSTAL GROWTH; ELECTRON DEVICES; ENERGY CONSERVATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; MICROWAVE DEVICES; MOBILE COMPUTING; NONMETALS; OPTICAL DESIGN; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TELECOMMUNICATION; THERMODYNAMIC PROPERTIES; TRANSISTORS;

ALGAN/GAN; ALGAN/GAN HEMT; CHARACTERISATION; COMPOSITE SUBSTRATES; HIGH-POWER MICROWAVE; LOW COSTS; THERMAL PROPERTIES; WIRELESS COMMUNICATION SYSTEMS;

SUBSTRATES;

EID: 50249142981     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418957     Document Type: Conference Paper

References (8)

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