Fluorine incorporation and thermal treatment on single and stacked Si 3N4 membranes for ISFET/REFET application

Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

  Lai, Chao Sung ^a   Lue, Cheng En ^a   Yang, Chia Ming ^b   Pijanowska, Dorota G ^c  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b Inotera Memories   (Taiwan)

^c INSTITUTE OF BIOCYBERNETICS AND BIOMEDICAL ENGINEERING   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL SENSITIVITY; ELECTROLYTE INSULATOR SEMICONDUCTORS; LAYER STRUCTURES; PH SENSITIVITY; PLASMA TREATMENT; POST TREATMENT; REFERENCE FIELD; SINGLE-LAYER STRUCTURE; THERMAL TREATMENT;

FIELD EFFECT TRANSISTORS; FLICKERING; FLUORINE; PH EFFECTS; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SOLIDS;

SEMICONDUCTING SILICON;

EID: 72249109865     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3250978     Document Type: Article

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