Microtechnologies for pH ISFET chemical sensors

Microelectronics Journal

Volumn 28, Issue 4 SPEC. ISS., 1997, Pages 389-405

  Cane C ^a   Gracia I ^a   Merlos, A ^a  

^a CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010586286     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00068-7     Document Type: Article

References (62)

1. P. Bergveld, Development, operation and application of the ion sensitive field effect transistor as a tool for electrophysiology, IEEE Trans. Biomed. Eng., BME-19 (1972) 342-351.
2. T. Matsuo and K.D. Wise, An integrated field effect electrode for biopotential recording, IEEE Trans. Biomed. Eng., BME-21 (1974) 485-487.
3. T. Matsuo and M. Esashi, Methods of ISFET fabrication, Sensors & Actuators, 1 (1981) 77-96.
4. M. Gotoh, S. Oda, I. Shimizu, A. Seki, E. Tamiya and I. Karube, Construction of amorphous silicon ISFET, Sensors & Actuators, 16 (1989) 55-65.
5. T. Akiyama, Y. Ujihira, Y. Okabe, T. Sugano and E. Niki, Ion-sensitive field-effect transistors with inorganic gate oxide for pH sensing, IEEE Trans. Electron Devices, ED-29(12) (Dec. 1982) 1936-1941.
6. S.D. Moss, J. Janata and C.C. Johnson, Potassium ion-sensitive field effect transistor, Analyt. Chem., 47(13) (Nov. 1975) 2238-2243.
7. R.M. Cohen, R.J. Huber, J. Janata, R.W. Ure and S.D. Moss, A study of insulator materials used in ISFET gates, Thin Solid Films, 53 (1978) 169-173.
8. H. Abe, M. Esashi and T. Matsuo, ISFETs using inorganic gate thin films, IEEE Trans. Electron Devices, ED-26(12) (Dec. 1979) 1939-1944.
9. C.F. Chan and M.H. White, Characterization of surface and buried channel ion sensitive field effect transistors (ISFETs), Proc. IEDM 83 Meeting, July 1983, pp. 651-653.
10. L. Bousse, N.F. de Rooij and P. Bergveld, Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface, IEEE Trans. Electron Devices, ED-30(10) (Oct. 1983) 1263-1270.
11. H.-S. Wong and M.H. White, A CMOS-integrated 'ISFET-Operational Amplifier'. Chemical sensor employing differential sensing, IEEE Trans. Electron Devices, 36(3) (March 1989) 479-487.
12. 5-gates of pH-sensitive devices: comparative spectroscopic and electrical studies, Sensors & Actuators, 17 (1989) 195-202.
13. D. Wilhem, H. Voigt, W. Treichel, R. Ferreti and S. Prasad, pH sensors based on differential measurements on one pH-FET chip, Sensors & Actuators B, 4 (1991) 145-149.
14. Y. Vlasov, A. Bratov, M. Sidorova and Y. Tarantov, Investigation of pH-sensitive ISFETs with oxide and nitride membranes using colloid chemistry methods, Sensors & Actuators B, 1 (1990) 357-360.
15. V. Rocher, J.M. Chovelon and N. Jaffrezic-Renault, An oxinitride ISFET modified for working in a differential mode for pH detection, J. Electrochem. Soc., 141 (2) (Feb. 1994) 535-539.
16. R. Smith, R.J. Huber and J. Janata, Electrostatically protected ion sensitive field effect transistors, Sensors & Actuators, 5 (1984) 127-136.
17. K. Tsukada, Y. Miyahara, Y. Shibata and H. Miyagi, Proc. Transducers 91 Conf., San Francisco, CA, May 1991, pp. 218-221.
18. S. Wakida, S. Mochizuki, R. Makabe, A. Kawahara, M. Yamane, S. Takasuka and K. Higashi, pH-sensitive ISFETs based on titanium nitride and their application to battery monitor, Proc. Transducers 91, San Francisco, CA, May 1991, pp. 222-224.
19. T. Katsube, pH-sensitive sputtered iridium oxide films, Sensors & Actuators, 2 (1982) 333-335.
20. M.T. Pham, S. Howitz, C. Kunath, E. Kurth and H. Köhler, Backside membrane structures for ISFETs applied in miniature analysis systems, Sensors & Actuators B, 18-19 (1994) 333-335.
21. T. Ito, H. Inagaki and I. Igarashi, ISFETs with ion-sensitive membranes fabricated by ion implantation, IEEE Trans. Electron Devices, ED-35(1) (Jan. 1988) 56-64.
22. H.S. Wong, Y. Hu and M.H. White, The ion sensitivity of boron implanted silicon nitride chemical sensors, J. Electrochem. Soc., 36(10) (Oct. 1989) 2968-2972.
23. K.M. Chen, G.H. Li, L.X. Chen and Y. Zhu, Improvement of structural instability of the ion-sensitive field-effect transistor (ISFET), Sensors & Actuators B, 13-14 (1993) 209-211.
24. A. Garde, J. Alderman and W. Lane, Development of a pH-sensitive ISFET suitable for fabrication in a volume production environment, Sensors & Actuators B, 26-27 (1995) 341-344.
25. W.H. Ko, C.D. Fung, D. Yu and Y.H. Xu, Multiple ISFET with integrated circuits, Proc. Int. Meeting on Chemical Sensors, Fukuoka, Japan, Sept. 1983, pp. 496-500.
26. R.L. Smith and D.C. Scott, An integrated sensor for electrochemical measurements, IEEE Trans. Biomed. Eng., BME-33(2) (Feb. 1986) 83-90.
27. D.L. Harame, L.J. Bousse, J.D. Shott and J.D. Meindl, Ion-sensing devices with silicon nitride and borosilicate glass insulators, IEEE Trans. Electron Devices, ED-34(8) (Aug. 1987) 1700-1707.
28. K. Tsukada, M. Sebata, Y. Miyahara and H. Miyagi, Long-life multiple-ISFETs with polymeric gates, Sensors & Actuators, 18 (1989) 329-336.
29. I. Igarashi, T. Ito, T. Taguchi, O. Tabata and H. Inagaki, Multiple ion sensor array, Sensors & Actuators B, 1 (1990) 8-11.
30. C. Cui, P.W. Cheung and S. Yee, An experimental study of instability in inorganic gate ISFETs, Sensors & Actuators B, 1 (1990) 421-424.
31. L. Bousse, D. Hafeman and N. Tran, Time dependence of the chemical response of silicon nitride surfaces, Sensors & Actuators B, 1 (1990) 361-367.
32. C. Cané, I. Gràcia, A. Merlos, M. Lozano, E. Lora-Tamayo, J. Esteve, Compatibility of ISFET and CMOS technologies for smart sensors, Proc. Transducers 91, San Francisco, CA, 1991, pp. 225-228.
33. 2 gate insulator, Sensors & Actuators B, 13-14 (1993) 655-656.
34. V. Rocher, S. Poyard, N. Jaffrezic-Renault, C. Ajoux, M. Lemiti and A. Sibai, Photo-CVD silicon nitride thin layers as pH-ISFET sensitive membrane, Sensors & Actuators B, 18-19 (1994) 342-347.
35. K. Tsukada, Y. Miyahara, Y. Shibata and H. Miyagi, An integrated chemical sensor with multiple ion and gas sensors, Sensors & Actuators B, 2 (1990) 291-295.
36. L. Bousse, J. Shott and J.D. Meindl, A process for the combined fabrication of ion sensors and CMOS circuits, IEEE Electron Device Lett., 9(1) (Jan. 1988) 44-46.
37. P. Neuzil, ISFET integrated sensor technology, Sensors & Actuators B, 24-25 (1995) 232-235.
38. A. Van den Berg, A. Grisel, H.H. Van den Vlekkert and N.F. de Rooij, A micro-volume open liquid junction reference electrode for pH-ISFETs, Sensors & Actuators B, 1 (1990) 425-432.
39. S. Ufer and K. Cammann, Ion-sensitive field-effect transistor with improved membrane adhesion, Sensors & Actuators B, 7 (1992) 572-575.
40. D. Harame, J. Shott, J. Plummer and J. Meindl, An implantable ion sensor transducer, Proc. IEDM81, pp. 467-471, 1981.
41. P. Comte and J. Janata, A field effect transistor as a solid-state reference electrode, Analyt. Chim. Acta, 101 (1978) 247-252.
42. P. Bergveld, A. Van den Berg, P.D. Van der Wal, M. Skowronska-Ptasinska, E.J. Sudhölter and D.N, Reinhoudt, How electrical and chemical requirements for REFETs may coincide, Sensors & Actuators, 18 (1989) 309-327.
43. A. van Den Berg, P. Bergveld, D.N. Reinhoudt and E.J.R. Sudhölter, Sensitivity control of ISFETs by chemical surface modification, Sensors & Actuators, 8 (1985) 129-148.
44. H. Perrot, N. Jaffrezic-Renault, N.F. de Rooij and H. Van den Vlekkert, Ionic detection using differential measurement between an ion-sensitive FET and a reference FET, Sensors & Actuators, 20 (1989) 293-299.
45. J.M. Chovelon, J.J. Fombon, P. Clechet, N. Jaffrezic-Renault, C. Martelet, A. Nyamsi and Y. Cross, Sensitization of dielectric surfaces by chemical grafting: application to pH ISFETs and REFETs, Sensors & Actuators B, 8 (1992) 221-225.
46. H.H. Van den Vlekkert, N.F. de Rooij, A. van den Berg and A. Grisel, Multi-ion sensing system based on glass encapsulated pH-ISFETs and a pseudoREFET, Sensors & Actuators B, 1 (1990) 395-400.
47. P. Bergveld, Future applications of ISFETs, Sensors & Actuators B, 4 (1991) 125-133.
48. F. Lisdat and W. Moritz, A reference element based on a solid-state structure, Sensors & Actuators B, 15-16 (1993) 228-232.
49. A. Sibbald, A chemical-sensitive integrated-circuit: the operational transducer, Sensors & Actuators, 7 (1985) 23-38.
50. E. Müller, P. Woias, P. Hein and S. Koch, Differential ISFET/REFET pairs as a reference system for integrated ISFET-sensor arrays, Proc. Transducers 91, San Francisco, CA, 1991, pp. 467-470.
51. A. Wong, Theoretical and experimental studies of CVD aluminum oxide as pH sensitive dielectric for the back contacts ISFET sensor, Ph.D. Thesis, Case Western Reserve University, 1985.
52. H.H. Van den Vlekkert, B. Kloeck, D. Prongue, J. Berthoud, B. Hu, N.F. de Rooij, E. Gilli and P.H. de Crousaz, A pH-ISFET and an integrated pH-pressure sensor with back-side contacts, Sensors & Actuators, 14 (1988) 165-176.
53. B. Kloeck, H.H. Van den Vlekkert and N.F. de Rooij, A combined pH-pressure catheter for gastroenterological applications, Sensors & Actuators, 17 (1989) 541-545.
54. D. Ewald, A. van den Berg and A. Grisel, Technology for backside contacted pH-sensitive ISFETs embedded in a p-well structure, Sensors & Actuators B, 1 (1990) 335-340.
55. T. Sakai, I. Amemiya, S. Uno and M. Katsura, A backside contact ISFET with a silicon-insulator-silicon structure, Sensors & Actuators B, 1 (1990) 341-344.
56. H. Yagi and T. Sakai, Rear-gate ISFET with a membrane locking structure using an ultrahigh concentration selective boron diffusion technique, Sensors & Actuators B, 13-14 (1993) 212-216.
57. 2Si structure, Sensors & Actuators B, 13-14 (1993) 653-654.
58. M.T. Pham, S. Howitz, C. Kunath, E. Kurt and H. Köhler, Backside membrane structures for ISFETs applied in miniature analysis systems, Sensors & Actuators B, 18-19 (1994) 333-335.
59. A. Merlos, J. Esteve, M.C. Acero, C. Cané and J. Bausells, Low-cost fabrication technology for IC-compatible backside contacted ISFETs, in Sensors VI: Technology, Systems and Applications, Adam Hilger, Bristol, 1991.
60. A. Merlos, J. Esteve, M.C. Acero, C. Cané and J. Bausells, Application of nickel electroless plating to the fabrication of low-cost backside contact ISFETs, Sensors & Actuators B, 26-27 (1995) 336-340.
61. A. Merlos, E. Cabruja and J. Esteve, New technology for easy and fully IC-compatible fabrication of backside-contacted ISFETs, Sensors & Actuators B, 24-25 (1995) 228-231.
62. A. Sibbald and J.E.A. Shaw, A flow-through ion selective field effect transistor, Sensors & Actuators, 12 (1987) 297-300.