An atomic force microscope estimation of the point of zero charge of silicon insulators

Sensors and Actuators, B: Chemical

Volumn 46, Issue 2-3, 1998, Pages 126-132

  Raiteri, R ^a,c   Margesin, B ^b   Grattarola, M ^a  

^a UNIVERSITY OF GENOA   (Italy)

^b ITC IRST   (Italy)

^c JOHANNES GUTENBERG UNIVERSITY   (Germany)

Author keywords

Atomic force microscope (AFM); Electrostatic interaction; Ion sensitive field effect transistors (ISFETs); Point of zero charge (pzc); Sensors

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL SENSORS; COMPUTER SIMULATION; ELECTROLYTES; ELECTROSTATICS; ION SENSITIVE FIELD EFFECT TRANSISTORS; PARTIAL DIFFERENTIAL EQUATIONS; PH EFFECTS; POTENTIOMETRIC SENSORS; SILICON NITRIDE; SILICON ON INSULATOR TECHNOLOGY;

POINT OF ZERO CHARGE (PZC);

SILICON SENSORS;

EID: 0345914960     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(98)00098-7     Document Type: Article

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