Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1-xGex structures on Si(0 0 1) substrates

Solid-State Electronics

Volumn 53, Issue 11, 2009, Pages 1198-1201

  Mizutani, Takuya ^a   Nakatsuka, Osamu ^a   Sakai, Akira ^b   Kondo, Hiroki ^a   Ogawa, Masaki ^a   Zaima, Shigeaki ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Dislocation; Germanium; Silicon; Strain relaxation; Tensile strain; X ray diffraction

Indexed keywords

DISLOCATION; ELASTIC STRAIN RELAXATION; EPITAXIALLY GROWN; NOVEL METHODS; SI(0 0 1); STRAIN-RELAXED; STRAINED-GE; STRAINED-SI; UNIAXIAL TENSILE STRAIN;

DIFFRACTION; GERMANIUM; MICROANALYSIS; MICROFABRICATION; MICROMACHINING; SILICON; STRAIN CONTROL; STRAIN RELAXATION; SUBSTRATES; X RAY DIFFRACTION;

TENSILE STRAIN;

EID: 72049114439     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.08.001     Document Type: Article

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