Electron field emission from wide bandgap semiconductors under intervalley carrier redistribution

Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

  Litovchenko, V ^a   Grygoriev, A ^a   Evtukh, A ^a   Yilmazoglu, O ^b   Hartnagel, H L ^b   Pavlidis, D ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MATERIALS; BULK SEMICONDUCTORS; CARRIER REDISTRIBUTION; CONDUCTION BAND ELECTRONS; CURRENT VOLTAGE; ELECTRICAL FIELD; ELECTRON BANDS; ELECTRON FIELD EMISSION; ENERGY BAND STRUCTURE; ENERGY DIFFERENCES; FIELD EMISSION CURRENTS; FIELD-EMISSION CHARACTERISTICS; FOWLER-NORDHEIM; FREE ELECTRON; SIZE QUANTIZATION; THEORETICAL MODELS; WIDE BAND-GAP MATERIAL; WIDE-BAND-GAP SEMICONDUCTOR;

ELECTRON MOBILITY; ELECTRONS; ENERGY GAP; FIELD EMISSION; FIELD EMISSION CATHODES; GALLIUM ALLOYS; GALLIUM NITRIDE; HEATING; SEMICONDUCTING GALLIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 71749116016     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3259384     Document Type: Article

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