First observation of bias oscillations in GaN Gunn diodes on GaN substrate

IEEE Transactions on Electron Devices

Volumn 55, Issue 6, 2008, Pages 1563-1567

  Yilmazoglu, Oktay ^a   Mutamba, Kabula ^a,b   Pavlidis, Dimitris ^a   Karaduman, Tamer ^c  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Texas Instruments Deutschland GmbH   (Germany)

Author keywords

Bias oscillation; GaN; Gunn diode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTROMIGRATION; GALLIUM NITRIDE; INDUCTANCE; SEMICONDUCTOR DOPING;

BIAS OSCILLATION; DRIFT VELOCITY; NEGATIVE-DIFFERENTIAL-RESISTANCE (NDR);

GUNN DIODES;

EID: 44949238761     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.921253     Document Type: Article

References (12)

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