Evidence of satellite valley position in GaN by photoexcited field emission spectroscopy

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Yilmazoglu, O ^a   Pavlidis, D ^a   Hartnagel, H L ^a   Evtukh, A ^b   Litovchenko, V ^b   Semenenko, N ^b  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTROACUPUNCTURE; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; ELECTRON MOBILITY; ELECTRONS; EMISSION SPECTROSCOPY; FIELD EMISSION; GALLIUM NITRIDE; LANDFORMS; MAGNETISM; MOLECULAR SPECTROSCOPY; SEMICONDUCTING GALLIUM; SPECTRUM ANALYSIS;

AMERICAN INSTITUTE OF PHYSICS (AIP); DIFFERENT SLOPES; ELECTRON FIELD EMISSION PROPERTIES; EMISSION CURRENTS; EMITTER TIPS; ENERGY DIFFERENCES; EXPERIMENTAL RESULTS; FIELD EMISSION SPECTROSCOPY; FIELD EMITTERS; FOWLER NORDHEIM (F N) PLOTS; FULLY DEPLETED; GAN SUBSTRATES; HIGH ELECTRIC FIELDS; MEASURED VALUES; MODEL BASED (OPC); PHOTO ELECTROCHEMICAL ETCHING (PEC); ULTRAVIOLET (UV); UV ILLUMINATIONS;

GALLIUM ALLOYS;

EID: 45149117110     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937257     Document Type: Article

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