Carbon occupancy of interstitial sites in vanadium carbide films deposited by direct current reactive magnetron sputtering

Thin Solid Films

Volumn 517, Issue 24, 2009, Pages 6493-6496

  Portolan, E ^a   Amorim, C L G ^a   Soares, G V ^a   Aguzzoli, C ^a   Perottoni, C A ^a,b   Baumvol, I J R ^a,b   Figueroa, C A ^a  

^a UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Interstitial carbon; Phase transition; Reactive magnetron sputtering; Vanadium carbide

Indexed keywords

ATOMIC RATIO; BRAGG PEAKS; CARBON ATOMS; CARBON PHASE; CRYSTALLINE STRUCTURE; DIRECT CURRENT; GLANCING ANGLE X-RAY DIFFRACTIONS; INTENSITY RATIO; INTERSTITIAL DIFFUSION; INTERSTITIAL SITES; OCTAHEDRAL INTERSTITIAL SITE; PARTIAL PRESSURE RATIO; REACTIVE MAGNETRON SPUTTERING; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SI SUBSTRATES; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENCE; VANADIUM CARBIDES;

CARBIDES; CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; MAGNETRON SPUTTERING; MAGNETRONS; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; VANADIUM; VANADIUM ALLOYS;

CARBON FILMS;

EID: 71749111362     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.202     Document Type: Article

References (21)

1. Sanchez-Lopez J.C., Martinez-Martinez D., Lopez-Cartes C., and Fernandez A. Surf. Coat. Technol. 202 (2008) 4011
2. Abadias G., Michel A., Tromas C., Jaouen C., and Dub S.N. Surf. Coat. Technol. 202 (2007) 844
3. In: Riedel R. (Ed). Handbook of Ceramic Hard Materials (2000), Wiley-VCH, Germany
4. Lipatnikov V.N., Gusev A.I., Ettmayer P., and Lengauer W. J. Phys., Condens. Matter 11 (1999) 163
5. Lipatnikov V.N., Gusev A.I., Ettmeier P., and Lengauer W. Phys. Solid State 41 (1999) 474
6. Hu J., Li C., Wang F., and Zhang W. J. Alloys Compd. 421 (2006) 120
7. Liu H., Zhu J., Liu Y., and Lai Z. Mater. Lett. 62 (2008) 3084
8. Lipatnikov V.N., Lengauer W., Ettmayer P., Keil E., Groboth G., and Kny E. J. Alloys Compd. 261 (1997) 192
9. Aouni A., Weisbecker P., Loi T.H., and Bauer-Grosse E. Thin Solid Films 469-470 (2004) 315
10. Liao M.Y., Gotoh Y., Tsuji H., and Ishikawa J. J. Vac. Sci. Technol., A 23 (2005) 1379
11. Feldman L.C., Mayer J.W., and Picraux S.T. Materials Analysis by Ion Channeling (1982), Academic Press, New York
12. Kraus W., and Nolze G. PowderCell for Windows Version 2.4 (2000)
13. Paredez P., Figueroa C.A., Zagonel L.F., Reichert F.R., Ribeiro C.R.M., Point S., Godon C., Minea T.M., and Alvarez F. J. Nanosci. Nanotechnol. 2 (2005) 188
14. Czyzniewski A. Thin Solid Films 433 (2003) 180
15. Kittel C. Introduction to Solid State Physics. 7th ed (1996), John Wiley & Sons Inc., New York
16. McCauley T.M., Gruen D.M., and Krauss A.R. Appl. Phys. Lett. 73 (1998) 1646
17. Lieberman M.A., and Lichtenberg A.J. Principles of Plasma Discharges and Materials Processing (1994), John Wiley & Sons, Inc., New York
18. Mahan B.M., and Myers R.J. University Chemistry (1987), Addison-Wesley Publishing Company, New York
19. Benco L. Solid State Commun. 94 (1995) 861
20. Slater J.C. J. Chem. Phys. 41 (1964) 3199
21. Didziulis S.V., Butcher K.D., and Perry S.S. Inorg. Chem. 42 (2003) 7766