Oriented carbon nanostructures containing nitrogen obtained by ion beam assisted deposition

Journal of Nanoscience and Nanotechnology

Volumn 5, Issue 2, 2005, Pages 188-191

  Paredez, P ^a   Figueroa, C A ^a   Zagonel, L F ^a   Reichert, F R ^a   Ribeiro, C R M ^a   Point, S ^b   Godon, C ^b   Minea, T M ^b   Alvarez, F ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

Field Emission; Ion Beam Assisted Deposition; Multiwall Carbon Nanostructures; Nitrogen Doping

Indexed keywords

FIELD EMISSION PROPERTIES; MULTIWALL CARBON NANOSTRUCTURES; NITROGEN DOPING; THERMAL ANNEALING;

ATOMIC FORCE MICROSCOPY; CARBON; DOPING (ADDITIVES); EMISSION SPECTROSCOPY; FIELD EMISSION MICROSCOPES; GRAPHITE; IN SITU PROCESSING; ION BEAM ASSISTED DEPOSITION; NICKEL; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

ARGON; CARBON; GRAPHITE; ION; NANOMATERIAL; NICKEL; NITROGEN; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; HEAT; OXIDATION REDUCTION REACTION; RAMAN SPECTROMETRY; SCANNING ELECTRON MICROSCOPY; SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

ARGON; CARBON; GRAPHITE; HEAT; IONS; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; NICKEL; NITROGEN; OXIDATION-REDUCTION; SILICON; SPECTROMETRY, X-RAY EMISSION; SPECTRUM ANALYSIS, RAMAN;

EID: 20544462173     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2005.052     Document Type: Article

References (31)

1. S. Iijima, Nature 354, 56 (1991).
2. C. Schöenberger and L. Forró, Phys. World 37 (June 2000).
3. S. Frank, P. Poncharal, Z. L. Wang, and W. A. De Heer, Science 280, 1744 (1998);
4. C. Dekker, Phys. Today 52(5), 22 (1999).
5. M. M. J. Treacy, T. W. Ebbesen, and J. M. Gibson, Nature 381, 678 (1996).
6. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical Properties of Nanotubos, Imperial College Press, London (1998).
7. J. W. Mintmire, B. I. Dunlap, and C. T. White, Phys. Rev. Lett. 68, 631 (1992).
8. W. A. de Heer, A. Châtelain, and D. Ugarte, Science 270, 1179 (1995);
9. Y. Saito and S. Uemura, Carbon 38, 169 (2000).
10. R. G. Lacerda, A. S. Teh, M. H. Yang, K. B. K. Teo, N. L. Rupesinghe, S. H. Dalal, K. K. K. Koziol, D. Roy, G. A. J. Amaratunga, W. I. Milne, M. Chhowalla, D. G. Hasko, F. Wyczisk, and P. Legagneux, Appl. Phys. Lett. 84, 269 (2004).
11. P. G. Collins and P. Avouris, Sci. Am. 283(6), 38 (2000).
12. T. Pradeep, V. Vijayakrishnan, A. K. Santra, and C. N. R. Rao, J. Phys. Chem. 95, 10 564 (1991).
13. T. Guo, C. Jin, and R. E. Smalley, J. Phys. Chem. 95, 4948 (1991).
14. W. Andreoni, A. Curioni, K. Holczer, K. Prassides, M. Keshavarz-K, J. C. Hummelen, and F. Wudl, J. Am. Chem. Soc. 118 (1996).
15. T. Ikeda, T. Kamo, and M. Danno, Appl. Phys. Lett. 67, 900 (1995).
16. R. Droppa Jr., C. T. M. Ribeiro, R. A. Zanatta, M. C. dos Santos, and F. Alvarez, Phys. Rev. B 68, 2454 (2003).
17. F. Alvarez and M. C. dos Santos, J. Non-Cryst. Solids 266, 808 (2000).
18. D. Shultz, R. Droppa Jr., F. Alvarez, and M C. dos Santos, Phys. Rev. Lett. 90, 15501-1 (2003).
19. M. Terrones, H. Terrones, N. Grobet, W. K. Hsu, Y. Q. Zhu, J. P. Hare, H. W. Kroto, D. R. M. Walton, Ph. Kohler-Redlich, M. Rühle, J. P. Zhang, and A. K. Cheetham, Appl. Phys. Lett. 75, 3932 (1999).
20. R. Sen, B. C. Satishkumar, A. Govidaraj, K. R. Harikumar, G. Raina, J. P. Zhang, A. K. Cheetham, and C. N. R. Rao, Chem. Phys. Lett. 287, 67 (1998).
21. M. Nath, B. C. Satishkumar, A. Govindaraj, C. P. Vinod, and C. N. R. Rao, Chem. Phys. Lett. 322, 333 (2000).
22. S. L. Sung, S. H. Sai, C. H. Tseng, F. K. Chiang, X. W. Liu, and H. C. Shih, Appl. Phys. Lett. 74, 197 (1999).
23. C. B. Murray, S. Sum, H. Doyle, and T. Betley: MRS Bull. 26, 985 (2001).
24. Y. Lifshitz: Diam. Relat. Mat. 8, 1659 (1999).
25. P. Hammer and F. Alvarez, Thin Solid Films 398, 16 (2001).
26. P. Hammer, N. M. Victoria, and F. Alvarez, J. Vac. Sci. Technol. A 16, 2941 (1998).
27. F. Alvarez, M. C. dos Santos, and P. Hammer, Appl. Phys. Lett. 73, 24 (1998).
28. M. C. dos Santos and F. Alvarez, Phys. Rev. B 58, 13918 (1998).
29. J. C. Hummelen, C. Bellavia-Lund, and F. Wudl, Top. Curr. Chem. 199, 93 (1999).
30. T. Belz, A. Bauer, J. Find, M. Günter, D. Herein, H. Möckel, N. Pfänder, H. Sauer, G. Schulz, J. Schütze, O. Timpe, U. Wild, and R. Schlögl, Carbon 36, 731 (1998).
31. See, for instance: S. M. Sze, Physics of Semiconductors, Wiley-Interscience, New York (1969).