Effect of spatial relationship between arc plasma and substrate on the properties of transparent conducting Ga-doped ZnO thin films prepared by vacuum arc plasma evaporation

Thin Solid Films

Volumn 517, Issue 24, 2009, Pages 6824-6828

  Minami, Tadatsugu ^a   Miyata, Toshihiro ^a   Honma, Yasunori ^a   Ito, Tomoyuki ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electrical measurements and property; Transmittance; Vacuum arc plasma deposition; Zinc oxide

Indexed keywords

ARC PLASMA; ELECTRICAL MEASUREMENTS AND PROPERTIES; ELECTRICAL PROPERTY; GA-DOPED ZNO; SPATIAL RELATIONSHIPS; SUBSTRATE SURFACE; SUBSTRATE TEMPERATURE; THICKNESS DEPENDENCE; TRANSMITTANCE; VACUUM ARC PLASMA; VACUUM ARC PLASMA EVAPORATION;

CARRIER CONCENTRATION; CAVITY RESONATORS; CHEMICAL VAPOR DEPOSITION; CONDUCTIVE FILMS; DEPOSITION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; GALLIUM; GALLIUM ALLOYS; MAGNETIC FILMS; OXYGEN; PLASMA DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA FLOW; PLASMA JETS; PLASMA SOURCES; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THIN FILMS; VACUUM; VACUUM DEPOSITION; VACUUM EVAPORATION; VACUUM TECHNOLOGY; VAPORS; ZINC; ZINC OXIDE;

PLASMA DEPOSITION;

EID: 71749106955     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.05.012     Document Type: Article

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