Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type Ge

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 576-579

  Auret, F D ^a   Meyer, W E ^a   Coelho, S ^a   Hayes, M ^a   Nel, J M ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Annealing; Defects; DLTS; Electron beam deposition; Germanium

Indexed keywords

DEPOSITION; ELECTRIC CONTACTS; ELECTRON IRRADIATION; ELECTRON TRAPS;

ELECTRON BEAM DEPOSITION; HIGH-ENERGY ELECTRON IRRADIATION; SCHOTTKY CONTACTS; V-SB COMPLEX;

CRYSTAL DEFECTS;

EID: 33845223319     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.008     Document Type: Article

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