Characteristic properties of Y2SiO5:Ce thin films grown with PLD

Physica B: Condensed Matter

Volumn 404, Issue 22, 2009, Pages 4431-4435

  Coetsee, E ^a   Terblans, J J ^a   Swart, H C ^a  

^a UNIVERSITY OF THE FREE STATE   (South Africa)

Author keywords

AFM; CL; PLD; Thin films; Y2SiO5:Ce

Indexed keywords

AFM; AMBIENT GAS; AVERAGE PARTICLE SIZE; BACKGROUND GAS; CHARACTERISTIC PROPERTIES; ELECTRON DEGRADATION; EXPERIMENTAL PARAMETERS; GAS ENVIRONMENT; GAS PRESSURES; KRYPTON FLUORIDE LASERS; LASER FLUENCES; LUMINESCENT INTENSITY; LUMINESCENT PROPERTY; PHOSPHOR THIN FILMS; PL INTENSITY; PULSE FREQUENCIES; SEM; SUBSTRATE TEMPERATURE;

ARGON; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CERIUM; CERIUM COMPOUNDS; CRYSTAL STRUCTURE; GASES; GRAIN BOUNDARIES; KRYPTON; LASERS; LUMINESCENCE; MORPHOLOGY; OXYGEN; PHOTODEGRADATION; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SILICON OXIDES; SURFACE MORPHOLOGY; THIN FILMS; X RAY DIFFRACTION;

SUBSTRATES;

EID: 71749094100     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.09.046     Document Type: Article

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