Development of wafer scale encapsulation process for large displacement piezoresistive MEMS devices

Sensors and Actuators, A: Physical

Volumn 156, Issue 2, 2009, Pages 275-283

  Ayanoor Vitikkate, Vipin ^a   Chen, Kuan lin ^a   Park, Woo Tae ^a   Kenny, Thomas W ^a  

^a Stanford University   (United States)

Author keywords

Oxidation; Thin films; Wafer scale encapsulation; Wide gaps

Indexed keywords

DIE AREA; DRIE ETCHING; FABRICATION PROCESS; HIGH VACUUM; LARGE DISPLACEMENTS; MEMSDEVICES; MICRO-MACHINED GYROSCOPE; PIEZO-RESISTIVE; QUALITY FACTOR Q; SILICON ON INSULATOR; SILICON STRUCTURES; THIN FILM ENCAPSULATION; WAFER SCALE; WAFER SCALE ENCAPSULATION; WIDE GAP;

MEMS; MICROELECTROMECHANICAL DEVICES; OXIDATION; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VACUUM;

SILICON WAFERS;

EID: 71649092714     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2009.09.001     Document Type: Article

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