Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor

Thin Solid Films

Volumn 516, Issue 6, 2008, Pages 1218-1222

  Kang, KyongTae ^a   Kim, Il Doo ^b   Lim, Mi Hwa ^a   Kim, Ho Gi ^a   Hong, Jae Min ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Barium strontium titanate; Electrical properties and measurements; Gate insulator; Mn doping; Zinc oxide transistor

Indexed keywords

CURRENT DENSITY; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); ELECTRIC INSULATORS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MANGANESE COMPOUNDS; ZINC OXIDE;

ANNEALING TEMPERATURE; BARIUM STRONTIUM TITANATE; ELECTRICAL PROPERTIES; GATE INSULATORS; THIN FILM TRANSISTOR;

THIN FILMS;

EID: 37349113175     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.05.068     Document Type: Article

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