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Korean Journal of Materials Research

Volumn 19, Issue 8, 2009, Pages 417-420

Transparent phosphorus doped ZnO ohmic contact to GaN based LED

(2) Lim, Jae Hong a Park Seong Ju, S J b

a University of California Riverside (United States)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

GaN LED; Ohmic contact; Phosphorus doped ZnO

Indexed keywords

CURRENT SPREADING; FORWARD CURRENTS; FORWARD VOLTAGE; GAN BASED LED; INJECTION CURRENTS; LED CHIPS; NITRIDE BASED LIGHT EMITTING DIODES; OPTICAL OUTPUT POWER; OUTPUT POWER; PHOSPHORUS-DOPED; POST DEPOSITION ANNEALING; RADIO FREQUENCY MAGNETRON SPUTTERING; SPECIFIC CONTACT RESISTANCES;

ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; OHMIC CONTACTS; PHOSPHORUS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 71149102792 PISSN: 12250562 EISSN: None Source Type: Journal
DOI: 10.3740/MRSK.2009.19.8.417 Document Type: Article

Times cited : (7)

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