Effect of interlayers on the indium oxide-doped ZnO ohmic contact to p-type GaN

Journal of the Electrochemical Society

Volumn 152, Issue 6, 2005, Pages

  Lim, Jae Hong ^a   Hwang, Dae Kue ^a   Kim, Hyun Sik ^a   Yang, Jin Ho ^a   Navamathavan, R ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRIC POTENTIAL; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FREE-HOLE CONCENTRATION; INTERDIFFUSION; NI-GA SOLID SOLUTIONS; SHEET RESISTANCE;

ZINC OXIDE;

EID: 22544481771     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1914758     Document Type: Article

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