Electrical conduction properties of Si δ-doped GaAs grown by MBE

Physica B: Condensed Matter

Volumn 404, Issue 21, 2009, Pages 4202-4206

  Yildiz, A ^a,b   Lisesivdin, S B ^c   Altuntas, H ^a   Kasap, M ^a   Ozcelik, S ^a  

^a GAZI UNIVERSITY   (Turkey)

^b AHI EVRAN UNIVERSITY   (Turkey)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

2D VRH; Impurity band conduction; Si doped GaAs

Indexed keywords

DISLOCATION SCATTERING; ELECTRICAL CONDUCTION; GAAS; HIGH TEMPERATURE; HOPPING CONDUCTION; IMPURITY BAND CONDUCTION; IMPURITY BANDS; LOCALIZED STATE; LOW TEMPERATURES; MOTT VARIABLE-RANGE HOPPING; RESISTIVITY MEASUREMENT; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

CARRIER CONCENTRATION; CONDUCTION BANDS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM ALLOYS; HALL EFFECT; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM; SILICON; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES;

THERMAL EFFECTS;

EID: 71149095649     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.07.190     Document Type: Article

References (34)

1. Schubert E.F., Ficher A., and Ploog K. IEEE Trans. Electron. Devices 33 (1986) 625
2. Nakazato K., Blaikie R.J., and Ahmed H. J. Appl. Phys. 75 (1994) 5123
3. Shi J.M., Koenraad P.M., Stadt A.F.W., Peeters F.M., Farias G.A., Devreese J.T., Wolter J.H., and Wilamowski Z. Phys. Rev. B 55 (1996) 13093
4. Frizzarini M., da Silva E.C.F., Quivy A.A., Cavalheiro A., Leite J.R., and Meneses E.A. Phys. Rev. B 61 (2000) 13923
5. Levin M., Cheng L.T., Shlimak I., Ginodman V., Resnick L., Sandomirskii V., Friedland K.J., and Hey R. Physica E 12 (2002) 634
6. Pozina G., Holtz P.O., Sernelius B., Buyanov A.V., Radamson H.H., Madsen L.D., Monemar B., Thordson J., and Andersson T.G. Phys. Scripta T 79 (1999) 99
7. Adomi K., Strite S., Morkoç H., Nakamura Y., and Otsuka N. J. Appl. Phys. 69 (1991) 220
8. Look D.C., Walters D.C., Manasreh M.O., Sizelove J.R., Stutz C.E., and Evans K.R. Phys. Rev. B 42 (1990) 3578
9. Benzaquen M., Walsh D., and Mazuruk K. Phys. Rev. B 36 (1987) 4748
10. Buyanov A.V., Holtz P.O., Chen W.M., Monemar B., Andersson T.G., and Thordson J. Appl. Phys. Lett. 68 (1996) 3464
11. Laine T., Saarinen K., Makinen J., Hautojarvi P., Corbel C., Ashwin M.J., and Newman R.C. Appl. Phys. Lett. 71 (1997) 1843
12. Agan S., Mironov O.A., Parker E.H.C., Whall T.E., Parry C.P., Kashirin V.Y., Komnik Y.F., Krasovitsky V.B., and Emeleus C.J. Phys. Rev. B 63 (2001) 075402
13. Khondaker S.I., Shlimak I.S., Nicholls J.T., Peper M., and Ritchic D.A. Phys. Rev. B 59 (1999) 4580
14. Schubert E.F. J. Vac. Sci. Technol. A 8 (1990) 2980
15. Young P.G., Mena R.A., Alterovitz S.A., Schacham S.E., and Haugland E.J. Electron. Lett. 28 (1992) 1352
16. Hai G.Q., and Studart N. Brazilian J. Phys. 26 (1996) 333
17. Hai G.Q., and Studart N. Phys. Rev. B 52 (1995) R2245
18. Seeger K. Semiconductor Physics. fifth ed. (1991), Springer, Berlin, Heidelberg
19. Mott N.F. J. Non-Cryst. Solids 1 (1968) 1
20. Johnson C., and Jiang H. Phys. Rev. B 48 (1993) 2823
21. Fritzsche H. In: Tauc J. (Ed). Amorphous and Liquid Semiconductors (1974), Plenum, London 254
22. Van Keuls F.W., Mathur H., Jiang H.W., and Dahm A.J. Phys. Rev. B 56 (1997) 13263
23. Tsui D.C., and Allen S.J. Phys. Rev. Lett. 32 (1974) 1200
24. Raikh M.E., Czingon J., Ye Q., Koch F., Schoepe W., and Ploog K. Phys. Rev. B 45 (1992) 6015
25. Benzaquen M., Walsh D., and Mazuru K. Phys. Rev. B 38 (1988) 10933
26. Brooks H. Adv. Electron. Electron Phys. 7 (1955) 158
27. Dexter D.L., and Seitz F. Phys. Rev. 86 (1952) 964
28. Podor B. Phys. Stat. Sol. 16 (1966) K167
29. Wolkenberg A., and Przeslawski T. Appl. Surf. Sci. 254 (2008) 6736
30. Mishima T.D., Keay J.C., Goel N., Ball M.A., Chung S.J., Johnson M.B., and Santos M.B. Physica E 21 (2004) 770
31. Chung S.J., Goldammer K.J., Lindstrom S.C., Johnson M.B., and Santos M.B. J. Vac. Sci. Technol. B 17 (1999) 1151
32. Jena D., Gossard A.C., and Mishra U.K. Appl. Phys. Lett. 76 (2000) 1707
33. Maitiy C.K., Bera L.K., and Chattopadhyay S. Semicond. Sci. Technol. 13 (1998) 1225
34. Akabori M., Guzenko V.A., Sato T., Schäpers Th., Suzuki T., and Yamada S. Phys. Rev. B 77 (2008) 205320