Low-temperature resistance saturation in Si-δ-doped GaAs structure with Π-like gate electrode

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 12, Issue 1-4, 2002, Pages 634-636

  Levin, M ^a   Lu Tie Cheng, L ^a   Shlimak, I ^a   Ginodman, V ^a   Resnick, L ^a   Sandomirskii, V ^a   Friedland, K J ^b   Hey, R ^b  

^a BAR ILAN UNIVERSITY   (Israel)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Hoping transport; Localization; Resistance saturation

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRODES; LOW TEMPERATURE EFFECTS; SEMICONDUCTOR DOPING;

RESISTANCE SATURATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035239401     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00405-2     Document Type: Conference Paper

References (2)