Structural defects in InSb/AlxIn1-xSb quantum wells grown on GaAs (0 0 1) substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 770-773

  Mishima, T D ^a   Keay, J C ^a   Goel, N ^a   Ball, M A ^a   Chung, S J ^a   Johnson, M B ^a   Santos, M B ^a  

^a University of Oklahoma   (United States)

Author keywords

Dislocation scattering; InSb quantum well; Mobility

Indexed keywords

ANISOTROPY; DEFORMATION; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION SCATTERING; INSB QUANTUM WELLS; MOBILITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1642395295     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.129     Document Type: Conference Paper

References (8)

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