Electron mobility in Si δ-doped GaAs with spatial correlationsin the distribution of charged impurities

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 19, 1997, Pages 13093-13099

  Shi, J ^a   Koenraad, P ^a   van de Stadt, A ^a   Peeters, F ^a   Farias, G ^a   Devreese, J ^a   Wolter, J ^a   Wilamowski, Z ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000152075     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.13093     Document Type: Article

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