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Journal of Crystal Growth

Volumn 241, Issue 1-2, 2002, Pages 57-62

Defect formation in GaAs grown by organometallic vapor phase epitaxy and the structure of the native defect EL2

(1) Morrow, Richard A a

a University of Maine (United States)

Author keywords

A1. Growth models; A1. Point defects; A3. Organometallic vapor phase epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON TRAPS; FERMI LEVEL; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL PRESSURE; POINT DEFECTS; SEMICONDUCTOR DOPING; STOICHIOMETRY;

GROWTH MODELS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036566505 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01247-2 Document Type: Article

Times cited : (3)

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