Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 630-634

  Chanda, S K ^a   Koshka, Y ^a   Yoganathan, M ^b  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b II VI Inc   (United States)

Author keywords

Deep levels, photoluminescence (PL); Mapping; Native point defects; Semi insulating (SI) SiC; Vanadium

Indexed keywords

DEEP LEVELS, PHOTOLUMINESCENCE (PL); NATIVE POINT DEFECTS; SEMI-INSULATING (SI) SIC;

COMPLEXATION; ELECTRIC CONDUCTIVITY; PHOTOLUMINESCENCE; POINT DEFECTS; SILICON WAFERS; VANADIUM;

SILICON CARBIDE;

EID: 33646814943     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0111-3     Document Type: Conference Paper

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