Effects of total gas flow rate and sputtering power on the critical condition for target mode transition in Al-O2 reactive sputtering

Vacuum

Volumn 84, Issue 5, 2009, Pages 629-632

  Chiba, Y ^a   Abe, Y ^a   Kawamura, M ^a   Sasaki, K ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Gettering effect; Plasma emission intensity; Reactive sputtering; Target voltage

Indexed keywords

CRITICAL CONDITION; GAS FLOWRATE; GETTERING EFFECT; OXIDE MODE; OXYGEN CONCENTRATIONS; PLASMA EMISSION INTENSITY; SPUTTERING POWER; STOICHIOMETRIC RATIO; TARGET MODE;

AERODYNAMICS; ATOMS; FLOW OF GASES; OXIDE FILMS; OXYGEN SUPPLY; REACTIVE SPUTTERING; SILICON SOLAR CELLS; TARGETS;

ALUMINUM;

EID: 70649107028     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.06.024     Document Type: Article

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